Non-polar (11-20) GaN grown on sapphire with double overgrowth on micro-rod/stripe templates

MOVPE of InN films on GaN templates grown on sapphire and silicon(111) substrates

Nitrogen-Polar (0001¯) GaN Grown on c-Plane Sapphire with a High-Temperature AlN Buffer

We demonstrate growing nitrogen-polar (N-polar) GaN epilayer on c-plane sapphire using a thin AlN buffer layer by metalorganic chemical vapor deposition. We have studied the influence of the AlN buffer layer on the polarity, crystalline quality, and surface morphology of the GaN epilayer and found that the growth temperature of the AlN buffer layer played a critical role in the growth of the Ga...

Structural characterization of non-polar (112 0) and semi-polar (1126) GaN films grown on r-plane sapphire

Thick GaN films, with (1120) or (1126) planes parallel to the r-plane of sapphire, were grown by molecular beam epitaxy using AlN or GaN buffer layers. Characterization by transmission electron microscopy revealed a high density of basal-plane stacking faults (BSFs) in the (1120) non-polar GaN (a-GaN) films. {1120} and {1010} prismatic-plane and {1102} pyramidal-plane stacking faults (SFs) doma...

Title: Stress distribution of GaN layer grown on micro-pillar patterned GaN templates

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Direct lateral epitaxy overgrowth of GaN on sapphire substrates based on a sparse GaN nucleation technique

A sparse nucleation process on sapphire ~0001! substrates has been developed for the growth of GaN thin films. The density of nucleation sites is reduced to only 4310 cm. Based on this process, we performed direct lateral epitaxial overgrowth ~LEO! of GaN by metalorganic chemical vapor deposition on patterned SiO2/sapphire ~0001! substrates. An aggregate lateral to vertical growth rate ratio of...